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Wednesday, July 22, 2020 | History

6 edition of Plasma deposition of amorphous silicon-based materials found in the catalog.

Plasma deposition of amorphous silicon-based materials

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  • 16 Currently reading

Published by Academic Press in Boston .
Written in English

    Subjects:
  • Amorphous semiconductors -- Design and construction.,
  • Silicon alloys.,
  • Plasma-enhanced chemical vapor deposition.

  • Edition Notes

    Includes bibliographical references and index.

    Statementedited by Giovanni Bruno, Pio Capezzuto, Arun Madan.
    SeriesPlasma--materials interactions
    ContributionsBruno, Giovanni., Capezzuto, Pio., Madan, A.
    Classifications
    LC ClassificationsTK7871.99.A45 P55 1995
    The Physical Object
    Paginationxi, 324 p. :
    Number of Pages324
    ID Numbers
    Open LibraryOL780575M
    ISBN 10012137940X
    LC Control Number95012433

    In this paper, we present and review recent developments in the high-density plasma chemical vapor deposition (HDP CVD) of silicon-based dielectric films, and of films of recent interest in the development of lower-dielectric-constant inspirationdayevents.com by: @article{osti_, title = {Comparative Study of Low-temperature PECVD of Amorphous Silicon using Mono-, Di-, Trisilane and Cyclohexasilane}, author = {Konstantin Pokhodnya and Joseph Sandstrom and Xuliang Dai and Philip Boudjouk and Douglas L. Schulz}, abstractNote = {The hydrogenated amorphous silicon a-Si:H films were grown by plasma-enhanced chemical vapor deposition (PECVD) using.

    High-density plasma chemical vapor deposition of silicon-based dielectric films for integrated circuits by S. V. Nguyen In this paper, we present and review recent developments in the high-density plasma chemical vapor deposition (HDP CVD) of silicon-based dielectric films, and of films of recent interest in. Published Research. A. Ahnood, Y. Suzuki, A. Madan, A. Nathan, “Pulsed-radio frequency plasma enhanced chemical vapour deposition of low temperature silicon nitride for thin film transistors, Thin Solid Films , ,

    A layer-by-layer technique, using a reactor with two separate plasma sources, was developed for a-Si:H deposition and nanocrystallization. Substrates were heated to °C and rotated between the two plasma sources, with selectable residence times in each source. A SiH4/He/H2 capacitively coupled plasma (CCP) was employed to deposit a thin a-Si:H layer that was subsequently exposed to a H2 Cited by: 1. Thin films of hydrogenated amorphous silicon containing nanocrystalline silicon inclusions (a/nc-Si:H) have been synthesized in an RF capacitively coupled PECVD system using a mixture of hydrogen diluted silane and helium, under deposition conditions at the edge of powder formation within the inspirationdayevents.com: T. J. Belich, S. Thompson, C. R. Perrey, U. Kortshagen, C. B. Carter, J. Kakalios.


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Plasma deposition of amorphous silicon-based materials Download PDF EPUB FB2

Oct 10,  · Plasma Deposition of Amorphous Silicon-Based Materials is a timely, comprehensive reference book written by leading authorities in the field. This volume links the fundamental growth kinetics involving complex plasma chemistry with the resulting semiconductor film properties and the subsequent effect on the performance of the electronic devices Book Edition: 1.

Plasma Deposition of Amorphous Silicon-Based Materials is a timely, comprehensive reference book written by leading authorities in the field. This volume links the fundamental growth kinetics involving complex plasma chemistry with the resulting semiconductor film properties and the subsequent effect on the performance of the electronic devices.

Plasma Deposition of Amorphous Silicon-Based Materials is a timely, comprehensive reference book written by leading authorities in the field.

This volume links the fundamental growth kinetics involving complex plasma chemistry with the resulting semiconductor film properties and the subsequent effect on the performance of the electronic devices Author: Pio Capezzuto.

Plasma Deposition of Amorphous Silicon-Based Materials and a great selection of related books, art and collectibles available now at inspirationdayevents.com Focusing on plasma chemistry of amorphous silicon-based materials, this volume links the fundamental growth kinetics involving complex plasma chemistry with the resulting semiconductor film Read more.

Plasma Deposition of Amorphous Silicon-Based Materials (Plasma-Materials Plasma deposition of amorphous silicon-based materials book - Kindle edition by Pio Capezzuto, Arun Madan.

Download it once and read it on your Kindle device, PC, phones or tablets. Use features like bookmarks, note taking and highlighting while reading Plasma Deposition of Amorphous Silicon-Based Materials (Plasma-Materials Interactions).

Amorphous silicon has a band gap of eV, and thus, microcrystalline silicon, with a band gap of eV, makes an ideal match to amorphous silicon in tandem cells. Semiconductors made from amorphous silicon have recently become important for their commercial applications in optical and electronic devices including FAX machines, solar cells, and liquid crystal displays.

Plasma Deposition of Amorphous Silicon-Based Materials is a timely, comprehensive reference book written by leading authorities in the field. Fortmann C.M. () Deposiion Conditions and Optoelectronic Properties of a-Si:H Alloys, in G.

Bruno, P. Capezzuto and A. Madan (eds.), Plasma Deposition of Amorphous Silicon-Based Materials, Academic Press, New-York, pp. – CrossRef Google ScholarCited by: 2. Semiconductors made from amorphous silicon have recently become important for their commercial applications in optical and electronic devices including FAX machines, solar cells, and liquid crystal displays.

Plasma Deposition of Amorphous Silicon-Based Materials is a timely, comprehensive reference book written by leading authorities in the. Amorphous-Silicon-Based Devices passivation layer (SPL), (2) a charge generation layer (CGL), (3) a charge trans- port layer (CTL), and (4) a bottom-blocking layer (BL).

To obtain full use of electrical and optoelectronic property controllability in a-Si and its alloys with controlling impurity doping and compositional regulation, a wide Cited by: 7.

The present chapter is devoted to the study of amorphous (a-Si:H), polymorphous (pm-Si:H), and microcrystalline (μc-Si:H) silicon, deposited by the plasma-enhanced chemical vapor deposition (PECVD) technique at low temperatures.

We have studied the main deposition parameters that have strong influence on the optical, electrical, and structural properties of the polymorphous and Author: Mario Moreno, Roberto Ambrosio, ArturoTorres, Alfonso Torres, Pedro Rosales, Adrián Itzmoyotl, Migue.

Amorphous and microcrystalline silicon thin films are still commonly produced using the method that first resulted in hydrogen incorporation in the material (Sterling and Swann, ). G., P. Capezzuto, and A. Madan, Plasma deposition of amorphous silicon-based materials (Academic Press Plasma deposition of amorphous-based materials Cited by: 3.

Plasma-enhanced chemical vapor deposition (PECVD) is a chemical vapor deposition process used to deposit thin films from a gas state to a solid state on a substrate. Chemical reactions are involved in the process, which occur after creation of a plasma of the reacting gases.

The plasma is generally created by radio frequency (RF) (alternating current (AC)) frequency or direct current (DC.

Amorphous, Polymorphous, and Microcrystalline Silicon Thin Films Deposited by Plasma at Low Temperatures Chapter (PDF Available) · June with Reads How we measure 'reads'. "Amorphous Silicon Based Solar Cells," Xunming Deng and Eric A.

Schiff, in Handbook of Photovoltaic Science and Engineering, Antonio Luque and Steven Hegedus, editors (John Wiley & Sons, Chichester, ), pp. - This Book Chapter is brought to you for free and open access by the College of Arts and Sciences at SURFACE.

It hasCited by: Amorphous silicon (a-Si) is the non-crystalline form of silicon used for solar cells and thin-film transistors in LCDs. Used as semiconductor material for a-Si solar cells, or thin-film silicon solar cells, it is deposited in thin films onto a variety of flexible substrates, such as glass, metal and plastic.

Amorphous silicon cells generally feature low efficiency, but are one of the most. Plasma­Enhanced Chemical Vapor Deposition of Functional Coatings Summary Plasma-based technologies are increasingly used for the fabrication of thin films and coatings for numerous applications ranging from optics and optoelectronics to aerospace, automotive, biomedical, microelectronics, and others.

The present chapter reviews the. Approaching Defect-free Amorphous Silicon Nitride by Plasma-assisted Atomic Beam Deposition for High Performance Gate Dielectric.

the use of an amorphous- phased silicon-based derivative is more realistic for the complete replacement of amorphous SiO 2 in the gate inspirationdayevents.com by: 8. @article{osti_, title = {Research on High-Bandgap Materials and Amorphous Silicon-Based Solar Cells, Final Technical Report, 15 May January }, author = {Schiff, E.

and Gu, Q. and Jiang, L. and Lyou, J. and Nurdjaja, I. and Rao, P.}, abstractNote = {This report describes work performed by Syracuse University under this inspirationdayevents.com: E.A.

Schiff, Q. Gu, L. Jiang, P. Rao. The surface reactivity of the SiH radical was measured during plasma deposition of various silicon-based materials using the imaging of radicals interacting with surfaces (IRIS) method. In this technique, spatially resolved laser-induced fluorescence (LIF) is used to determine surface reaction probabilities, R or β, of plasma species.

For SiH, R is near unity, ±and shows no Cited by: Plasma processing technologies are of vital importance to several of the largest manufacturing industries in the world. Foremost among these industries is the electronics industry, in which plasma-based processes are indispensable for the manufacture of very large-scale integrated microelectronic circuits.Plasma deposition of amorphous silicon alloys this last case, the values of E.F.(C) are less than unity, in contrast with the E.F.

values obtained for all the other systems of Figs. 1,2. This could be related to CHx radical density lower than that of SiHx; this.